发明名称 PLASMA PROCESSING CHAMBER WITH DUAL GAS SUPPLY STRUCTURE
摘要 A plasma processing chamber having a dual gas supply structure is provided to uniformly generate high density plasma by supplying dual gas in a manner that is suitable for a plasma generating structure in a plasma processing chamber having at least one discharge inducing bridge or at least one outer discharge bridge. Plasma is received in a vacuum chamber(110). At least one discharge inducing bridge(133) supplies a penetration path from the outside to the inside of a vacuum chamber, installed on the top(111) of the inside of the vacuum chamber. A transformer includes a toroidal magnetic core(131) and a primary winding(132) wherein the toroidal magnetic core is installed in the penetration path of the discharge inducing bridge. A first gas supply channel supplies first process gas to a portion on the at least one discharge inducing bridge. A second gas supply channel supplies second process gas to vacuum chamber independently of the first gas supply channel. The first gas supply channel can include at least one first gas inlet(113) that is installed in the upper part of the vacuum chamber to inject the first process gas to a portion over the discharge inducing bridge. The second gas supply channel can include a plurality of gas injection holes(112) installed on the top of the vacuum chamber, an upper cover(120) covering the upper part of the vacuum chamber, and at least one second gas inlet(121) installed in the upper cover.
申请公布号 KR20070113526(A) 申请公布日期 2007.11.29
申请号 KR20060046840 申请日期 2006.05.25
申请人 NEW POWER PLASMA CO., LTD. 发明人 CHOI, DAI KYU;WI, SOON IM
分类号 H01L21/3065;H01L21/205 主分类号 H01L21/3065
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