| 摘要 |
PROBLEM TO BE SOLVED: To provide an AM substrate having small variations in the parasitic capacitance between gate and drain electrodes. SOLUTION: On the active matrix substrate 1, where a TFT 14 is connected to each picture element electrode 16 arranged on a transparent substrate in a matrix, the parasitic capacitance Cgd is formed by a region, where the gate electrode 14G overlaps with the drain electrode 14D, and the periphery region. At least one end side of a semiconductor layer 14a is arranged outside a region for forming the parasitic capacitance Cgd while one end side separates from the end side of the region for forming the parasitic capacitance Cgd, by not less than the distance of toleranceΔe in the relative position deviation of the gate electrode 14G, the semiconductor layer 14a, a source electrode 14S, and the drain electrode 14D. COPYRIGHT: (C)2008,JPO&INPIT |
