| 摘要 |
Prior to edge exposure, the type of a photo resist that has been coated on a semiconductor wafer is identified. Then, the sensitivity of this resist is determined based on the information of the identified resist type. Based on the determined resist sensitivity, a laser output from a semiconductor laser light source, and a wafer rotation speed attained by a wafer rotating part are determined, and the edge exposure is then performed in accordance with these determined values. Thus, both of the laser output and the wafer rotation speed can be determined based on the resist sensitivity, and the edge exposure can be advanced in accordance with these values. It is therefore capable of flexibly coping with the sensitivity of the resist used.
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