METHOD AND MATERIALS TO CONTROL DOPING PROFILE IN INTEGRATED CIRCUIT SUBSTRATE MATERIAL
摘要
<p>Methods and materials for silicon on insulator wafer production in which the doping concentration in a handle wafer (30) is sufficiently high to inhibit dopant from diffusing from the bond wafer (10) during or after bonding to the handle wafer (30) .</p>
申请公布号
WO2007133935(A2)
申请公布日期
2007.11.22
申请号
WO2007US67939
申请日期
2007.05.01
申请人
ATMEL CORPORATION;MILLER, GAYLE, W.;MOSS, THOMAS, S., III;GOOD, MARK, A.
发明人
MILLER, GAYLE, W.;MOSS, THOMAS, S., III;GOOD, MARK, A.
