| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a pattern forming method by which high dimensional accuracy is realized by shortening the effective acid diffusion length of a chemical amplification type resist without decreasing throughput of a writing system, and to provide a writing method of a charged particle beam. <P>SOLUTION: The forming method of a resist pattern is characterized in that in order to shorten the effective acid diffusion length of a chemical amplification type resist, the amount of an acid diffusion inhibitor is increased, and that in order to prevent throughput of a writing system from decreasing thereby, current density is increased. Specifically the forming method includes; a step of applying a chemical amplification type resist on a substrate surface to be processed; a step of patternwise irradiating the substrate with a charged particle beam; a step of heat-treating the chemical amplification type resist; and a step of developing the patternwise irradiated chemical amplification type resist, wherein the amount of an acid diffusion inhibitor in the chemical amplification type resist is increased and current density for the irradiation with the charged particle beam is increased. <P>COPYRIGHT: (C)2008,JPO&INPIT |
