| 摘要 |
PROBLEM TO BE SOLVED: To increase capacitor capacitance while reducing parasitic capacitance between multilayered wires (vertically located wires) in a semiconductor device having a capacitor. SOLUTION: A photoresist film 3 is formed on a glass substrate 1. The photoresist film is selectively removed to form grooves including a groove 3c with a depth T1 and a groove 3d with a shallower depth T2 (<T1). A conductive material liquid is poured into the grooves, and heat treatment is performed to form a conductive film (lower layer wire) and a conductive film (lower electrode). An insulation film is formed on them. A conductive film (upper layer wire) and a conductive film (upper electrode) are formed on the insulation film. As a result, a distance can be increased between the lower layer wire and the upper layer wire, thereby reducing parasitic capacitance between them. In addition, a distance between the lower electrode and the upper electrode can be decreased, thereby increasing capacitance between them. COPYRIGHT: (C)2008,JPO&INPIT |
