| 摘要 |
A substrate introducing chamber, a reaction chamber and a substrate removing chamber are sequentially arranged with a shutter between adjacent ones of them. One or more substrates are mounted on a holder with their surfaces lying in vertical planes and carried into the substrate introducing chamber, the reaction chamber and the substrate removing chamber one after another. In the reaction chamber, a material gas is guided by gas guides to flow along the substrate surfaces in a limited space in which the substrates are disposed. The material gas is ionized into a plasma through the use of high-frequency energy obtained across a pair electrodes. The line of electric force of the high-frequency energy is directed along the substrate surfaces. By ionization of the material gas into the plasma, a non-single-crystal layer is formed, by deposition, on each substrate. At this time, the substrates are floating off the high-frequency energy source.
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