| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a nitride semiconductor light emitting device which allows reduction of drive voltage required to supply a 20 A/cm<SP>2</SP>density current, to less than 3 V, and operates at a lower voltage level than conventional one without damaging the properties intrinsic to the light emitting device. <P>SOLUTION: The nitride semiconductor light emitting device is configured such that In composition ratio (b) is 0.04≤b≤0.1 in an In<SB>b</SB>Ga<SB>1-b</SB>N barrier layer included in a multiplex quantum well 15, and the total thickness of an InGaN layer is 60 nm or less in the light emitting device including the In<SB>b</SB>Ga<SB>1-b</SB>N barrier layer, whose In composition ratio is in the range of 0.04 to 0.1. <P>COPYRIGHT: (C)2008,JPO&INPIT |
