发明名称 SINGLE WAFER ETCHING SYSTEM
摘要 PROBLEM TO BE SOLVED: To etch the edge of a wafer uniformly by preventing the leakage of an etching liquid to the lower surface of the wafer. SOLUTION: While rotating a single thin disklike silicon wafer 11 mounted to a wafer chuck 12 horizontally, the upper surface of the wafer is etched by supplying the etching liquid 14 thereto. A groove 27a for storing the etching liquid 14 flowing downward from the upper surface of the wafer 11 along the edge 11a of the wafer 11 is formed in a chuck 12 to oppose the edge 11a of the wafer 11; and a doughnut-like adhesion form 28 is provided in the chuck 12 having an upper surface adhering to the periphery of the lower surface of the wafer 11 mounted to the wafer chuck 12, and preventing the leakage of the etching liquid 14 stored in the groove 27a to the lower surface of the wafer 11. The outside diameter B of the adhesion form 28 is smaller by 6-0.2 mm than the outside diameter A of the silicon wafer 11. COPYRIGHT: (C)2008,JPO&INPIT
申请公布号 JP2007305644(A) 申请公布日期 2007.11.22
申请号 JP20060129948 申请日期 2006.05.09
申请人 SUMCO CORP 发明人 KOYADA SAKAE;HASHII TOMOHIRO;MURAYAMA KATSUHIKO;TAKAISHI KAZUNARI;KATO TAKEO
分类号 H01L21/306;H01L21/304 主分类号 H01L21/306
代理机构 代理人
主权项
地址