METHOD FOR FABRICATING LDMOS SEMICONDUCTOR DEVICE

摘要

A method for fabricating an LDMOS semiconductor device is provided to enhance reliability of the LDMOS semiconductor device by reducing a deviation of a threshold voltage. An N-well(110) is formed by implanting an n type dopant onto a substrate(100). An oxide layer is formed on the semiconductor substrate including the N-well. An oxide layer pattern(120) for opening a P-body region(130) is formed by patterning the oxide layer. A p-type dopant is implanted into the P-body region by using the oxide layer pattern. A spacer(140) is formed in the inside of the oxide layer pattern on the P-body region. An n-type dopant implantation region(150) as a posterior channel region is formed by implanting an n-type dopant by using the spacer formed in the inside of the oxide layer.