METHOD FOR ANALYZING DEFECTS OF SEMICONDUCTOR DEVICE

摘要

A method for analyzing defects of a semiconductor device is provided to analyze easily and correctly the defects of the semiconductor device without causing damage of a silicon substrate. An etch-back process is performed to etch back a front surface of a silicon substrate(100) corresponding to an upper surface of a control gate by using an FIB(Focused Ion Beam). A control gate etch process is performed to etch the control gate formed on a gate oxide layer by using a wright etchant. An analysis process is performed to analyze a defect point of the gate oxide layer by using an SEM(Scanning Electron Microscope). An etch ratio of the wright etchant is 200nm/10sec. The control gate etch process is performed within a range of 0 to 12 sec.