MEMORY USING MAGNETORESISTANCE EFFECT ELEMENT AND ITS DRIVING METHOD

摘要

PROBLEM TO BE SOLVED: To solve the following problems that a crosspoint type MRAM requires a selective transistor and a diode within the cell to suppress a read error caused by a sneak current which makes it difficult to downsize the cell and to rewrite by one directional driving current. SOLUTION: This cross-point type memory is provided with its memory cell of only a magnetoresistance effect element having asymmnetric diversity and nonlinearity, and with its cell area small. Further, a nonvolatile memory which can be rewritten by only one directional driving current is provided by making the constitution of the magnetoresitance effect element and a combination of the driving current direction appropriate. COPYRIGHT: (C)2008,JPO&INPIT