Semiconductor structure, has low trench passing into semiconductor substrate and electrically insulating buried layer, and low impedance contact formed in low trench of insulation trench for contacting buried layer

摘要

The structure has a highly doped buried layer (2) formed in parts of a semiconductor substrate (1). A single-crystal semiconductor layer (3) is arranged on the semiconductor substrate and the buried layer. A low trench (5) is filled with an insulating material for forming an insulation trench for electric insulation of regions of the structure. The low trench passes into the substrate and electrically insulates the buried layer. A low impedance contact (21) is formed in the low trench of the insulation trench for contacting the buried layer. An independent claim is also included for a method for manufacturing a semiconductor structure.