发明名称 |
Si nanowire substrate, method of manufacturing the same, and method of manufacturing thin film transistor using the same |
摘要 |
A silicon nanowire substrate having a structure in which a silicon nanowire film having a fine line-width is formed on a substrate, a method of manufacturing the same, and a method of manufacturing a thin film transistor using the same. The method of manufacturing the silicon nanowire substrate includes preparing a substrate, forming an insulating film on the substrate, forming a silicon film on the insulating film, patterning the insulating film and the silicon film into a strip shape, reducing the line-width of the insulating film by undercut etching at least one lateral side of the insulating film, and forming a self-aligned silicon nanowire film on an upper surface of the insulating film by melting and crystallizing the silicon film.
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申请公布号 |
US7297615(B2) |
申请公布日期 |
2007.11.20 |
申请号 |
US20060341519 |
申请日期 |
2006.01.30 |
申请人 |
SAMSUNG ELECTRONICS, CO., LTD. |
发明人 |
CHO HANS S.;NOGUCHI TAKASHI;XIANYU WENXU;KIM DO-YOUNG;YIN HUAXIANG;ZHANG XIAOXIN |
分类号 |
C30B1/02;H01L21/20 |
主分类号 |
C30B1/02 |
代理机构 |
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