发明名称 |
Shallow junction semiconductor |
摘要 |
An integrated circuit with a semiconductor substrate is provided. A gate dielectric is on the semiconductor substrate, and a gate is on the gate dielectric. A silicide layer is on the semiconductor substrate adjacent the gate and the gate dielectric. The silicide layer incorporates a substantially uniformly distributed and concentrated dopant therein. A shallow source/drain junction is beneath the salicide layer. An interlayer dielectric is above the semiconductor substrate, and contacts are in the interlayer dielectric to the salicide layer.
|
申请公布号 |
US7298012(B2) |
申请公布日期 |
2007.11.20 |
申请号 |
US20060307537 |
申请日期 |
2006.02.11 |
申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
PELELLA MARIO M.;EN WILLIAM GEORGE;PATON ERIC;MASZARA WITOLD P. |
分类号 |
H01L29/76 |
主分类号 |
H01L29/76 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|