发明名称 |
Semiconductor device including a TFT having large-grain polycrystalline active layer, LCD employing the same and method of fabricating them |
摘要 |
A display device includes a pixel region having a plurality of pixels and a peripheral circuit region disposed at a periphery of the pixel region for driving the pixels. The peripheral circuit region includes transistors fabricated from polycrystalline semiconductor and having a semiconductor crystalline grain of a first kind in a channel region thereof, wherein a grain size of the semiconductor crystalline grain of the first kind is at least 3 mum. The pixel region includes transistors fabricated from polycrystalline semiconductor and having a semiconductor crystalline grain of a second kind in a channel region thereof, wherein a grain size of the semiconductor crystalline grain of the second kind is at least 0.05 mum.
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申请公布号 |
US7297982(B2) |
申请公布日期 |
2007.11.20 |
申请号 |
US20050203970 |
申请日期 |
2005.08.16 |
申请人 |
HITACHI, LTD. |
发明人 |
SUZUKI KENKICHI;NAGATA TETSUYA;TAKAHASHI MICHIKO;SAITO MASAKAZU;OGINO TOSHIO;MIYANO MASANOBU |
分类号 |
H01L29/04;G02F1/136;G02F1/1362;G02F1/1368;H01L21/20;H01L21/336;H01L21/77;H01L21/84;H01L29/15;H01L29/786;H01L31/036 |
主分类号 |
H01L29/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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