发明名称 LEVEL SHIFTING CIRCUIT OF SEMICONDUCTOR DEVICE
摘要 A level shifting circuit for a semiconductor device is provided to efficiently generate first and second power voltages and a ground voltage by using transistors functioning as switches. A controller(100) changes the phase of a power converting input signals. A level shifting unit(200) increases/decreases the level of an input signal by using two level shifters to output a level shift output signal. A driving unit(300) amplifies the level shift output signal to output a power voltage output signal.
申请公布号 KR20070110746(A) 申请公布日期 2007.11.20
申请号 KR20060043587 申请日期 2006.05.15
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 CHEON, KWUN SOO
分类号 H03K19/0175;G11C5/14 主分类号 H03K19/0175
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