发明名称 |
LEVEL SHIFTING CIRCUIT OF SEMICONDUCTOR DEVICE |
摘要 |
A level shifting circuit for a semiconductor device is provided to efficiently generate first and second power voltages and a ground voltage by using transistors functioning as switches. A controller(100) changes the phase of a power converting input signals. A level shifting unit(200) increases/decreases the level of an input signal by using two level shifters to output a level shift output signal. A driving unit(300) amplifies the level shift output signal to output a power voltage output signal.
|
申请公布号 |
KR20070110746(A) |
申请公布日期 |
2007.11.20 |
申请号 |
KR20060043587 |
申请日期 |
2006.05.15 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
CHEON, KWUN SOO |
分类号 |
H03K19/0175;G11C5/14 |
主分类号 |
H03K19/0175 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|