发明名称 |
Method for producing a field effect transistor |
摘要 |
A field effect transistor is produced on a substrate. A semiconductor material is deposited on a portion of a single crystal temporary material. At least part of the temporary material is removed. A portion of a conducting material is then formed above and beneath the portion of semiconductor material. A layer of an electrically insulating material is located between the portion of temporary material and the substrate.
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申请公布号 |
US7297578(B2) |
申请公布日期 |
2007.11.20 |
申请号 |
US20040943242 |
申请日期 |
2004.09.16 |
申请人 |
STMICROELECTRONICS S.A. |
发明人 |
SKOTNICKI THOMAS;CORONEL PHILIPPE;HARTMANN JOEL |
分类号 |
H01L21/00;H01L21/302;H01L21/336;H01L21/4763;H01L29/423;H01L29/786 |
主分类号 |
H01L21/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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