发明名称 RESIST POLYMER, PREPARING METHOD, RESIST COMPOSITION AND PATTERNING PROCESS
摘要 A method for preparing a polymer for a resist material, a polymer for a resist material prepared by the method, a resist material containing the polymer, and a method for forming a pattern by using the resist material are provided to reduce the component insoluble in a resist solvent and to decrease the number of defect in photolithography. A method for preparing a polymer for a resist material comprises the steps of adding a solution containing a chain transfer agent in a reactor and maintaining a temperature of the reactor at a polymerization temperature; and continuously or discontinuously adding a solution containing a monomer and a polymerization initiator drop by drop for radical polymerization at the temperature. Preferably the chain transfer agent is a thiol compound.
申请公布号 KR20070110207(A) 申请公布日期 2007.11.16
申请号 KR20070045881 申请日期 2007.05.11
申请人 SHIN-ETSU CHEMICAL CO., LTD. 发明人 TACHIBANA SEIICHIRO;FUNATSU KENJI;KINSHO TAKESHI;NISHI TSUNEHIRO
分类号 G03F7/00;G03F7/039 主分类号 G03F7/00
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