HIGH DENSITY PLASMA CHEMICAL VAPOR DEPOSITION APPARATUS USING BEAT PHENOMENON AND GAP-FILL METHOD USING THE SAME

摘要

A high-density plasma chemical vapor deposition apparatus using a beat phenomenon and a gap-fill method using the same are provided to control properly ion energy by applying simultaneously two bias RF power having different frequencies to a substrate loading plate. A chamber(11) includes a constant reaction space. A substrate loading plate(12) is installed in the inside of the chamber. A gas injection unit(13) injects gas into an upper part of the substrate loading plate. A plasma generation unit generates plasma into the inside of the chamber. A first RF power source(20) is connected to the substrate loading plate and has a first frequency. A second RF power source(30) is connected to the substrate loading plate and has a frequency different from the first frequency. A difference between the first and second frequencies is less than 1% of the first frequency. A first and second matching circuits(22,32) are installed at the first and second RF power sources in order to match impedance.