发明名称 METHOD FOR PRODUCING POLISHED SEMICONDUCTOR
摘要 PROBLEM TO BE SOLVED: To find out a processing step which complies fully with the requirements for quality of semiconductor wafers and which is also economical. SOLUTION: Semiconductor wafers are cut from a crystal and subjected to a series of processing steps in which material is removed from a front side and a rear side of the semiconductor wafers, and the disclosed method includes following processing steps of: a mechanical processing step; an etching step for oxidizing semiconductor wafers and removing the material at a temperature from 20 to 70°C from the front side of the semiconductor wafers using a gas-state etchant containing hydrogen fluoride; and a polishing step of polishing the front side of the semiconductor wafers. In the processing step of polishing the front side of the semiconductor wafers, the material of 5μm or less as a whole is removed. COPYRIGHT: (C)2008,JPO&INPIT
申请公布号 JP2007300127(A) 申请公布日期 2007.11.15
申请号 JP20070122452 申请日期 2007.05.07
申请人 SILTRONIC AG 发明人 STADLER MAXIMILIAN;SCHWAB GUENTER;FEIJOO DIEGO;LANGSDORF KARL-HEINZ
分类号 H01L21/302;C30B29/06;H01L21/304 主分类号 H01L21/302
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