发明名称 Substrate Processing Apparatus and Method of Manufacturing Semiconductor Device
摘要 To prevent particles from generating by reducing a contact-gas area and improve a purge efficiency by reducing a flow passage capacity. There is provided a substrate processing apparatus, comprising a processing chamber 1 for processing a substrate 2 ; a substrate carrying port 10 provided on a sidewall of the processing chamber 1 , for carrying-in/carrying-out the substrate 2 to/from the processing chamber 1 ; a holder provided so as to be lifted and lowered in the processing chamber 1 , for holding the substrate 2 ; supply ports 3 and 4 provided above the holder, for supplying gas into the processing chamber 1 ; an exhaust duct 35 provided on the peripheral part of the holder, for exhausting the gas supplied into the processing chamber 1 ; and an exhaust port 5 provided below an upper surface of the exhaust duct 35 when the substrate is processed, for exhausting the gas discharged by the exhaust duct 35 outside the processing chamber 1 , wherein at least a part of a member constituting the exhaust duct 35 is provided so as to be lifted and lowered.
申请公布号 US2007264840(A1) 申请公布日期 2007.11.15
申请号 US20050663179 申请日期 2005.10.14
申请人 HITACHI KOKUSAI ELECTRIC INC. 发明人 ITATANI HIDEHARU;YANAI HIDEHIRO;HORII SADAYOSHI;SANO ATSUSHI
分类号 H01L21/00;B05C13/00 主分类号 H01L21/00
代理机构 代理人
主权项
地址
您可能感兴趣的专利