发明名称 |
PLASMA GENERATION APPARATUS FOR UNIFORMLY GENERATING LARGE SCALE INDUCTIVELY COUPLED PLASMA |
摘要 |
A plasma generator for uniformly generating large-scale inductively coupled plasma is provided to facilitate deposition of a silicon nitride film, a silicon oxide film, and poly silicon at low temperature and to prevent unnecessary discharge around a gas injector by grounding the gas injector while the gas injector is electrically insulated from an antenna module. A plasma generator(100) for uniformly generating large scale inductively coupled plasma includes a chamber(110) for forming a predetermined reaction space and having a substrate placing plate(120); a gas injector(140) installed on the upper part of the substrate placing plate in the chamber; a plasma generating source installed through the gas injector; and a power supply unit(160) positioned at the outer side of the chamber and connected to the plasma generating source. |
申请公布号 |
KR20070109274(A) |
申请公布日期 |
2007.11.15 |
申请号 |
KR20060042030 |
申请日期 |
2006.05.10 |
申请人 |
JUSUNG ENGINEERING CO., LTD. |
发明人 |
SHIN, GIL YONG;KWON, GI CHUNG;JEON, CHANG YEOP;CHOI, DONG KWON |
分类号 |
H05H1/34 |
主分类号 |
H05H1/34 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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