发明名称 PLASMA GENERATION APPARATUS FOR UNIFORMLY GENERATING LARGE SCALE INDUCTIVELY COUPLED PLASMA
摘要 A plasma generator for uniformly generating large-scale inductively coupled plasma is provided to facilitate deposition of a silicon nitride film, a silicon oxide film, and poly silicon at low temperature and to prevent unnecessary discharge around a gas injector by grounding the gas injector while the gas injector is electrically insulated from an antenna module. A plasma generator(100) for uniformly generating large scale inductively coupled plasma includes a chamber(110) for forming a predetermined reaction space and having a substrate placing plate(120); a gas injector(140) installed on the upper part of the substrate placing plate in the chamber; a plasma generating source installed through the gas injector; and a power supply unit(160) positioned at the outer side of the chamber and connected to the plasma generating source.
申请公布号 KR20070109274(A) 申请公布日期 2007.11.15
申请号 KR20060042030 申请日期 2006.05.10
申请人 JUSUNG ENGINEERING CO., LTD. 发明人 SHIN, GIL YONG;KWON, GI CHUNG;JEON, CHANG YEOP;CHOI, DONG KWON
分类号 H05H1/34 主分类号 H05H1/34
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