| 摘要 |
A lateral field effect transistor for high switching frequencies having a source region layer ( 4 ) and a drain region layer ( 5 ) laterally spaced and of highly doped first conductivity type, a first-conductivity-type channel layer ( 6 ) of lower doping concentration extending laterally and interconnecting the source region layer ( 4 ) and the drain region layer ( 5 ). The transistor has a gate electrode ( 7 ) arranged to control the properties of the channel layer ( 6 ), and a highly doped second-conductivity-type base layer ( 8 ) arranged under the channel layer ( 6 ) at least partially overlapping the gate electrode ( 7 ) and at a lateral distance to the drain region layer ( 5 ), the highly doped second-conductivity-type base layer ( 8 ) being shorted to the source region layer ( 4 ). The transistor also has at least one of the following: a) a spacer layer ( 10 ) having semiconductor material adjacent to the channel layer ( 6 ) and located between the channel layer ( 6 ) and gate electrode ( 7 ), at least in the vicinity of the gate electrode ( 7 ), and/or b) a spacer layer ( 9 ) having semiconductor material adjacent to the channel layer ( 6 ) and located between the channel layer ( 6 ) and the highly doped second-conductivity-type base layer ( 8 ).
|
