METHOD FOR FORMATING CONTACT HOLE IN SEMICONDUCTOR DEVICE

摘要

A method for forming a contact hole of a semiconductor device is provided to embody an aiming design CD(Critical Dimension) by using an improved photoresist pattern structure with a slope. An oxide layer(20-1) is formed on a silicon substrate(10). A photoresist layer is coated on the oxide layer. A predetermined photoresist pattern with a slope is formed on the resultant structure by using a photo process. A polymer is deposited on the predetermined photoresist pattern. A pattern hole with a reduce CD bias is formed on the resultant structure by using an etching process. The predetermined photoresist pattern has a negative profile or a positive profile.