| 摘要 |
<p>A method for forming a micro pattern of a semiconductor device is provided to form a micro pattern having a resolution more than a lithography apparatus by forming a pattern having a minimum pitch, and then forming other pattern between the prior pattern using a difference of etch selectivity rate. Etched layers(103,105) are formed on a substrate(101), and then a hard mask pattern(107) is formed on the etched layer. A first organic layer(109) is formed on the hard mask pattern. A second organic layer(111) is formed on the first organic layer. The second organic layer is planarized until the first organic layer is exposed. The first organic layer is etched until the etched layer is exposed. An organic mask pattern(113) is formed by etching the first and second organic layers, each organic mask pattern having a laminated structure consisting of the first and second organic layers is formed between the adjacent hard mask patterns.</p> |
