发明名称 |
METHOD FOR EPITAXIAL GROWTH OF SILICON CARBIDE |
摘要 |
A method for epitaxial growth of silicon carbide using chemical vapor deposition (CVD) is provided. This method utilizes halogenated carbon precursors and control of the gas-phase interaction of halogen-containing intermediate chemical products involving silicon and carbon, which ensures quality and homogeneity across the silicon carbide crystals. It also ensures a possibility to achieve device-quality epitaxial layers at lower growth temperatures as well as on on-axis or low off-angle substrate surfaces. The growth method can be applied to forming SiC device regions of desirable shape and dimensions by restricting the growth into windows formed in non-silicon carbide region on the top of SiC substrate. Application of the methods described herein will greatly benefit the production of high quality silicon carbide materials and devices.
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申请公布号 |
WO2007035570(A3) |
申请公布日期 |
2007.11.15 |
申请号 |
WO2006US36183 |
申请日期 |
2006.09.16 |
申请人 |
MISSISSIPPI STATE UNIVERSITY;KOSHKA, YAROSLAV |
发明人 |
KOSHKA, YAROSLAV |
分类号 |
C30B28/14;B05D3/14;C01B31/36;C30B15/14;C30B19/00;H01L21/331 |
主分类号 |
C30B28/14 |
代理机构 |
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地址 |
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