| 摘要 |
PROBLEM TO BE SOLVED: To improve performance and withstand voltage deteriorated due to the direction setting of a grain boundary in a thin-film transistor using a quasi-single crystal film. SOLUTION: In this thin film transistor, e.g. holes in the case of an n-channel type and electrons in the case of a p-channel type move in the lengthwise direction of a channel region 23. Since a grain boundary is arranged in such a manner as to go along the lengthwise direction of the channel region 23, a preventing action is exerted to a disadvantage that the holes and the electrons are hindered from their movement by the grain boundary to locally accumulate. Consequently, the mobility of the holes and the electrons is enhanced, and withstand voltage is enhanced to make it hard to generate kink effects and single latch-up. COPYRIGHT: (C)2008,JPO&INPIT
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