| 摘要 |
It has been discovered that a parasitic plasma problem which has existed with respect to the incoming plasma source gases to an processing chamber plasma generation system for PECVD thin film deposition can be avoided. The stability of a parasitic plasma is avoided by increasing the pressure in a conduit through which the plasma source gases flow. While avoidance of formation of a parasitic plasma in plasma source gas conduits leading to the processing chamber plasma generation system may be achieved by inserting a fixed restrictor in a conduit through which the plasma source gases flow, use of a variable surface restrictor in the conduit enables not only avoidance of the formation of a parasitic plasma in incoming plasma source gases, but also easier cleaning of the processing chamber plasma generation system when a remotely generated plasma is used for such cleaning.
|
