Lateral silicon on insulator semiconductor component, has lateral switching unit with drift zone connected with thermal cooling units, which dissipate heat loss from drift zone, where heat loss is produced in drift zone

摘要

The semiconductor component (1) has a lateral switching unit arranged on an isolation layer, where the switching unit has a source zone (5), a drift zone (7) and a drain zone (8). The drift zone is connected with thermal cooling units (13), which dissipate heat loss from the drift zone, where the heat loss is produced in the drift zone. The drift zone is of conductive type, in which drift zone areas (18) of other conductive type are embedded.