发明名称 METHOD OF DETECTING ETCHING DEPTH ON REAL TIME BASIS
摘要 PROBLEM TO BE SOLVED: To provide a method of detecting an etching depth on a real time basis which can accurately calculate the etching depth of a substrate even when the substrate is transparent. SOLUTION: The method of detecting an etching depth on a real time basis includes steps of irradiating a substrate 2 and a mask 3 provided on the surface of the substrate 2 as a member to be etched with a laser beam; detecting the intensity of an interference wave on the basis of reflected light 6c, 6d on the surface 2a of the substrate 2, and on a surface 3a of the mask 3; calculating a difference in optical path length of the reflected light 6c, 6d in the surface 2a of the substrate 2 and the surface 3a of the mask 3, on the basis of the detected intensity of the interference wave; and calculating an etching depth of the substrate 2. An inner bottom surface 2b of the used substrate 2 is already subjected to surface roughening treatment. COPYRIGHT: (C)2008,JPO&INPIT
申请公布号 JP2007299910(A) 申请公布日期 2007.11.15
申请号 JP20060126223 申请日期 2006.04.28
申请人 SUMITOMO ELECTRIC IND LTD 发明人 KURISU KENICHI
分类号 H01L21/3065;H01L21/66 主分类号 H01L21/3065
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