发明名称 |
CMOS IMAGE SENSOR AND METHOD OF MANUFACTURING SAME |
摘要 |
Disclosed are a complementary metal oxide semiconductor (CMOS) image sensor and a method of forming the same. The CMOS image sensor comprises a semiconductor substrate having a photodiode region and a transistor region. An optical path is formed between a micro lens on the photodiode region and a photodiode formed on the semiconductor substrate. The optical path comprises an inner lens formed between an intermetal insulation layer on the photodiode region and a transparent optical region formed on the inner lens. The transparent optical region generally has a different refractive index from the inner lens.
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申请公布号 |
US2007262366(A1) |
申请公布日期 |
2007.11.15 |
申请号 |
US20070782085 |
申请日期 |
2007.07.24 |
申请人 |
SAMSUNG ELECTRONICS CO,. LTD. |
发明人 |
BAEK HYOUN-MIN;YI DUK-MIN |
分类号 |
H01L31/113;H04N5/369;H04N5/374 |
主分类号 |
H01L31/113 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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