| 摘要 |
A semiconductor device includes first and second memory cells lying adjacently each other, the first cell comprising first island region and first conductive spacer, the first region including first island semiconductor portion, first insulating film and first FG, the first spacer provided on upper side portion of first FG, the second cell comprising second island region and-second conductive spacer, the second region including second island semiconductor portion adjacent to the first portion, second insulating film and second FG, the second spacer provided on upper side portion of second FG, the cells comprising interelectrode insulating film (IPD) and the CG, edge of under portion of the IPD positioned lower than bottom surfaces of the FGs, edge of under portion of the CG positioned equal to the bottom surfaces of the FGs or lower, the IPD being failed to have bending portion between side surface of FGs and CG.
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