发明名称 |
Thin film transistor, method of manufacturing the thin film transistor, and display substrate having the thin film transistor |
摘要 |
A thin film transistor includes a semiconductor pattern disposed on a substrate and a semiconductor pattern portion with a conductive or nonconductive characteristic, and a anti-diffusion portion on a side of the semiconductor pattern portion to prevent metal ions from being diffused along the semiconductor pattern portion. A first insulating layer covers the semiconductor pattern and has a first contact hole exposing a first region of the semiconductor pattern portion and a second contact hole exposing a second region of the semiconductor pattern portion. A gate electrode is disposed on the first insulating layer. A second insulating layer covers the gate electrode and has a third contact hole exposing the first region and a fourth contact hole exposing the second region. A source electrode is formed on the second insulating layer and connected to the first region, and a drain electrode is formed on the second insulating layer and connected to the second region.
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申请公布号 |
US2007262313(A1) |
申请公布日期 |
2007.11.15 |
申请号 |
US20060581619 |
申请日期 |
2006.10.16 |
申请人 |
LG PHILIPS LCD CO., LTD. |
发明人 |
LEE HONG KOO;JUNG SANG HOON |
分类号 |
H01L29/04 |
主分类号 |
H01L29/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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