| 摘要 |
<p>An overlay measuring apparatus of a semiconductor device and a method for measuring the overlay using the same are provided to find out a position of a vernier key regardless of an inserted opaque layer by irradiating a microwave to be reflected by a metal film, and to detect the position of a photoresist pattern by irradiating a visible light. A vernier key(116) having a metal spacer shape is formed on a semiconductor substrate(100). A material layer(120) is formed upon the vernier key. A photoresist pattern(125) is formed on the material layer. A beam source irradiates a microwave to measure an overlay between the vernier key and the photoresist pattern.</p> |
