发明名称 Memory access
摘要 A magnetic logic device comprises a first planar substrate for an electrical circuit having magneto-electrical read and write elements, and a plurality of second planar substrates formed in a stacked arrangement over the first substrate, the second substrate having a magnetic circuit 42a comprising a plurality of logic elements (such as NOT gates), a data writing element 33a and a data reading element 34a. The data writing and reading elements correspond in planar positioning to respective magneto-electrical writing 52a and reading 53a elements of the first substrate. The magnetic logic elements could be used for data storage, for example as a shift register. The second substrates could be separated by non-ferromagnetic layers. The logic elements could be formed using magnetic nanowires wherein the magnetic field is controlled using a rotating magnetic field generator. Also disclosed is a method for writing data to a magnetic circuit by locating the circuit in a rotating magnetic field and modulating the field in the location of a data writing element.
申请公布号 GB2436490(B) 申请公布日期 2007.11.14
申请号 GB20070012504 申请日期 2005.08.03
申请人 INGENIA TECHNOLOGY LIMITED 发明人 RUSSELL PAUL COWBURN;DANIEL ANTHONY ALLWOOD
分类号 G11C19/08;G11C13/02;H03K19/168 主分类号 G11C19/08
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