发明名称 Nanoscale programmable structures and methods of forming and using same
摘要 A programmable structure and device and methods of forming and using the structure and device are disclosed. The structure includes a soluble electrode, an ion conductor, and an inert electrode. Upon application of a sufficient voltage, a conductive region forms within or on the ion conductor and between the electrodes. The presence or absence of the conductive region can be used to store information in memory devices.
申请公布号 US7294875(B2) 申请公布日期 2007.11.13
申请号 US20050151904 申请日期 2005.06.14
申请人 AXON TECHNOLOGIES CORPORATION 发明人 KOZICKI MICHAEL N.
分类号 H01L27/148;G11C13/02;G11C16/02;H01L29/06;H01L45/00 主分类号 H01L27/148
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