| 摘要 |
In a manufacturing method of semiconductor device, initially, a trench pattern is laid out along a <100> direction of a (100) silicon substrate. Next, a trench is formed in the silicon substrate based on the laid-out trench pattern. Further, the silicon substrate with the trench formed therein is annealed in a low-pressure reducing atmosphere to cause silicon migration. This reduces the radius of curvature of a corner portion of the formed trench pattern. Consequently, changes of the contact area with an electrode and a contact can be suppressed in an active area isolated by the trench pattern, and characteristic deterioration caused by changes of the contact area can be suppressed.
|
