FIELD EFFECT TRANSISTOR

摘要

Disclosed is a field effect transistor characterized by containing at least one compound represented by the formula (1), (2) or (3) below, and an electron-transporting semiconductor material. (1) (2) (3) (In the formulae, X<SUB>1</SUB>-X<SUB>6</SUB> independently represent a sulfur atom, a selenium atom or a tellurium atom, and R<SUB>1</SUB>-R<SUB>6</SUB> independently represent an optionally substituted aromatic group.)