| 摘要 |
<p>Provided is a metal-oxide-semiconductor (MOS) capacitor of a semiconductor memory cell and a method of manufacturing of the same, including: a first region which is formed at a predetermined position of a semiconductor substrate in a direction of a length of the semiconductor substrate into a predetermined depth and filled with an insulating material; a second region formed at the edge of the first region into a predetermined depth; a third region formed at a predetermined distance from the second region by etching silicon into a predetermined depth in the direction of the length of the semiconductor substrate; a MOS capacitor dielectric layer formed along internal side surfaces of the second and third regions with a predetermined thickness and along a surface of the silicon between the second and third regions; a MOS capacitor region formed along the MOS capacitor dielectric layer; and a MOS capacitor electrode formed on the MOS capacitor dielectric layer and extending to the MOS capacitor region. The MOS capacitor according to the present invention forms a trench-type MOS capacitor at a second trench connected to a trench insulation region, so that it is possible to increase a capacity for storing charges that are electrical signals of a memory device in a small area.</p> |
