SOI WAFER MANUFACTURING METHOD

摘要

A SOI wafer manufacturing method has a step wherein ions of a neutral element, which is electrically inactive in silicon, are implanted from at least a surface of a base wafer or that of a bond wafer and an ion implanted damage layer is formed. In the SOI wafer manufacturing method, the neutral element ion implantation in the ion implanted damage layer forming step is performed with a dose quantity of 1OE0¹²atoms/cm² or more but notmore than 1OE0¹⁵atoms/cm². Thus, while suppressing generation of a leak current and deterioration of oxide film withstand voltage, the SOI wafer having sufficient gettering performance is manufactured.