发明名称 MEMORY ELEMENT AND MEMORY
摘要 <P>PROBLEM TO BE SOLVED: To provide a memory element which checks the thermal damage to the memory element to stably perform the repetitive operation. <P>SOLUTION: A memory layer 4 is disposed between two electrodes 3, 6 with an ion source layer 5 containing any element selected among Cu, Ag, Zn, adjacent to the memory layer 4. The memory layer 4 forms memory elements 10 made of an oxide containing at least one kind of elements selected among gold, silver, iridium, ruthenium, rhenium, platinum, palladium, rhodium and osmium, i.e., noble metal elements. <P>COPYRIGHT: (C)2008,JPO&INPIT
申请公布号 JP2007294745(A) 申请公布日期 2007.11.08
申请号 JP20060122311 申请日期 2006.04.26
申请人 SONY CORP 发明人 MIZUGUCHI TETSUYA;ARAYA KATSUHISA;KOCHIYAMA AKIRA;YAMADA NAOMI
分类号 H01L27/10;H01L45/00;H01L49/00 主分类号 H01L27/10
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