| 摘要 |
A process for fabricating a thin film transistor including: (a) depositing a gate dielectric precursor composition, wherein the gate dielectric precursor composition includes a polymer comprising polymerized one or more monomers, wherein the one or more monomers includes an optionally substituted vinyl arylalcohol; and (b) irradiating the gate dielectric precursor composition to crosslink the polymer.
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