| 摘要 |
PROBLEM TO BE SOLVED: To enhance controllability of a gate electrode for the potential of a channel region, and to raise current driving force. SOLUTION: A semiconductor element comprises a semiconductor region 3 formed on a semiconductor substrate 1 and containing impurities of specific conductivity type, source and drain regions 4a and 4b formed in the semiconductor region to oppose each other and containing a metal or a compound of a metal and a semiconductor forming the semiconductor region, a source and drain region, an insulating film 5 formed to cover the semiconductor region between the source region and the drain region and to cover a part of the source and drain regions, respectively, and a gate electrode 6 formed on the insulating film. The interface of the insulating film and the gate electrode on at least a part of the semiconductor region between the source and the drain regions exists closer to the semiconductor region side than the interface of the insulating film and the gate electrode on the joint of the source and drain region and the semiconductor region. COPYRIGHT: (C)2008,JPO&INPIT
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