| 摘要 |
PURPOSE:To favorably correct the correcting place of an LSI Al wiring by method wherein after the protective film or the oxide film on the surface of the Al wiring is removed, a metal thin film is precipitated on the correcting place of the Al wiring without a trouble that the surface of the Al wiring is exposed to the air and is oxidized. CONSTITUTION:The gas pressure of reaction gas in a reaction container 16 is held to 0.1 torrs or thereabouts by adjusting valves 25 and 22, high-frequency power is applied to an electrode 23 and an etching is performed for a constant time. The valve 22 is shut and after residues in the container are vacuum-exhaused, a stand 17 is made to shift and a positioning to the correcting place of a chip 18 is performed. Valves 21 and 29 are opened, a correcting substance is properly mixed with inactive gas and the total gas pressure in the container is held to several-hundred torrs by adjusting a valve 25. A shutter 30a is opened, a laser beam is irradiated on the correcting place, the organic metal gas is decomposed, an Al thin film is precipitated on the correcting place and the correcting place is corrected. Then, the valve 25 is opened and the interior of the container is sufficiently exhaused, and after that, the valve 29 is opened, inactive gas is introduced in the container and the gas pressure in the container is boosted to a large atmospheric pressure. According to this constitution, the correcting place of the Al wiring can be corrected without a trouble that the chip is contaminated or the surface of the Al wiring is oxidized. |
