| 摘要 |
PROBLEM TO BE SOLVED: To raise a coupling ratio without varying a threshold by an inter-cell interference effect. SOLUTION: A nonvolatile semiconductor memory includes first and second memory cells with a stack gate structure having floating gates FG1, FG2, and a control gate CG. The floating gates FG1, FG2 of the first and second memory cells are respectively constituted of a first part FG1 and a second part FG2 which is arranged on the first part FG1 and whose width in the extending direction of the control gate CG is smaller than that of the first part FG1. A first space between the first parts FG1 of the first and second memory cells is filled with one kind of insulating body. The control gate CG is arranged in a second space between the second parts of the first and second memory cells via a dielectric body having permittivity higher than that of the one kind of insulating body. COPYRIGHT: (C)2008,JPO&INPIT
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