发明名称 |
THIN-FILM TRANSISTOR DISPLAY PANEL AND METHOD FOR MANUFACTURING THE SAME |
摘要 |
PROBLEM TO BE SOLVED: To provide a thin-film transistor display panel and a method of manufacturing the same, in which manufacturing processes of an etch stopper type thin-film transistor display panel can be simplified. SOLUTION: The thin-film transistor display panel has: an insulating substrate; a gate line which is formed on the insulating substrate and includes a gate electrode; a gate insulating film which is formed on the gate line; a semiconductor which is formed on the gate insulating film; an etching shielding member which is partially formed on the semiconductor; an ohmic contact layer which is formed on the etching shielding member and has at least part that comes in contact with the semiconductor; a data wiring layer which is formed on the ohmic contact layer and has a plane pattern of a shape substantially identical to a pattern of the ohmic contact layer; a contact hole which is formed on the data wiring layer and has a passivation film; and a pixel electrode which is formed on the passivation film and is connected to part of the data wiring layer through the contact hole. COPYRIGHT: (C)2008,JPO&INPIT |
申请公布号 |
JP2007294951(A) |
申请公布日期 |
2007.11.08 |
申请号 |
JP20070104062 |
申请日期 |
2007.04.11 |
申请人 |
SAMSUNG ELECTRONICS CO LTD |
发明人 |
RYU SHUNKI |
分类号 |
H01L21/336;G02F1/1368;G09F9/30;H01L29/786;H01L51/50;H05B33/10 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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