发明名称 |
REGULATED CASCODE CIRCUIT AND AMPLIFIER HAVING THE SAME |
摘要 |
A regulated cascode circuit and an amplifier having the same are provided to obtain a stable and high output resistor even at voltage below 1V without increasing an area. A regulated cascode circuit(30) includes first and second PMOS FETs(P-channel Metal Oxide Semiconductor Field Effect Transistor)(32,34) connected between a first terminal(31) and an output terminal(Vo) in series to receive a first power; first and second NMOS(N-channel Metal Oxide Semiconductor) FETs(36,38) connected between the output terminal and a second terminal(39) in series to receive a second power; and a regulation circuit(40) outputting a first control signal(CTRL1) for preventing the voltage change of a drain(X1) of the first PMOS FET, to a gate of the second PMOS FET on the basis of the drain voltage of the first PMOS FET and outputting a second control signal(CTRL2) for preventing the voltage change of a source(X2) of the first NMOS FET, to a gate of the second NMOS FET on the basis of the source voltage of the first NMOS FET.
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申请公布号 |
KR20070107831(A) |
申请公布日期 |
2007.11.08 |
申请号 |
KR20060040289 |
申请日期 |
2006.05.04 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
JUNG, MU KYENG;KIM, JAE WHUI;KONG, BAI SUN |
分类号 |
H03F1/22 |
主分类号 |
H03F1/22 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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