发明名称 REGULATED CASCODE CIRCUIT AND AMPLIFIER HAVING THE SAME
摘要 A regulated cascode circuit and an amplifier having the same are provided to obtain a stable and high output resistor even at voltage below 1V without increasing an area. A regulated cascode circuit(30) includes first and second PMOS FETs(P-channel Metal Oxide Semiconductor Field Effect Transistor)(32,34) connected between a first terminal(31) and an output terminal(Vo) in series to receive a first power; first and second NMOS(N-channel Metal Oxide Semiconductor) FETs(36,38) connected between the output terminal and a second terminal(39) in series to receive a second power; and a regulation circuit(40) outputting a first control signal(CTRL1) for preventing the voltage change of a drain(X1) of the first PMOS FET, to a gate of the second PMOS FET on the basis of the drain voltage of the first PMOS FET and outputting a second control signal(CTRL2) for preventing the voltage change of a source(X2) of the first NMOS FET, to a gate of the second NMOS FET on the basis of the source voltage of the first NMOS FET.
申请公布号 KR20070107831(A) 申请公布日期 2007.11.08
申请号 KR20060040289 申请日期 2006.05.04
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 JUNG, MU KYENG;KIM, JAE WHUI;KONG, BAI SUN
分类号 H03F1/22 主分类号 H03F1/22
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