发明名称 SEMICONDUCTOR DEVICE FOR GENERATING AN OSCILLATING VOLTAGE
摘要 <p>A semiconductor Gunn device which displays an oscillating voltage due to the creation of charge domains which includes a plurality of semiconductor layers and at least two electrodes spaced from one another in the direction of the layers, an upper of which has a composition and/or dimensions predetermined so that a charge therein balances a depletion from a surface charge of the upper layer on application of a potential difference across said electrodes. The electrodes may be in contact solely with the upper layer. A method of manufacturing the device is also provided.</p>
申请公布号 WO2007125346(A1) 申请公布日期 2007.11.08
申请号 WO2007GB01568 申请日期 2007.04.30
申请人 ABERDEEN UNIVERSITY;UNIVERSITY COURT OF THE UNIVERSITY OF GLASGOW;PILGRIM, NEIL, JOHN;DUNN, GEOFFREY, MARTIN;KAHLID, ATA-UL-HEBIB;STANLEY, COLIN, ROY;THAYNE, IAIN, GRANGER;CUMMING, DAVID, ROBERT, SIME 发明人 PILGRIM, NEIL, JOHN;DUNN, GEOFFREY, MARTIN;KAHLID, ATA-UL-HEBIB;STANLEY, COLIN, ROY;THAYNE, IAIN, GRANGER;CUMMING, DAVID, ROBERT, SIME
分类号 H01L29/41;H01L29/772;H01L29/861;H01L29/864;H01L47/02 主分类号 H01L29/41
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