| 摘要 |
PROBLEM TO BE SOLVED: To suppress by-products deposited on the upper wall surface of a passage. SOLUTION: An epitaxial growth device has a reaction chamber 12 into which a silicon wafer W is stored, and a transfer chamber 13A communicating with the reaction chamber 12 via the passage 11. In this case, a reaction gas flows from a supply port 16 provided in the reaction chamber 12 toward an exhausting port 17 provided opposite to the supply port 16. An inflow prevention nozzle 40 for jetting out inflow prevention gas for preventing the inflow of reaction gas to the passage 11 is provided on a lower wall surface 11b in the passage 11, and the angle of the inflow prevention nozzle 40 is set so that it jets out the inflow prevention gas toward an area near an exit 12a of the reaction chamber 12 on an upper wall surface 11a in the passage 11. COPYRIGHT: (C)2008,JPO&INPIT
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